MRAM – Radiation Tolerant Memory
The Magneto-resistive Random Access Memory (MRAM), from 3D PLUS, stores data using magnetic polarisation rather than electric charge, which brings the MRAM unlimited read/write endurance and single event upset (SEU) immune characteristics. 1Mb to 128Mb radiation tolerant MRAM stacks are available in a variety of temperature ranges, organised x8, x16 and x32 and with power supply of 3.3V.
The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments.
3D Plus MRAM products are used as processor’s boot and program ROM and FPGA configuration memory in a variety of high performance computer in all the space applications fields, including sciences and deep space missions, earth observations, navigation, launchers and manned space vehicles, and telecommunications satellites.
3D PLUS product are available in the UK and Ireland from APC Hi-Rel. For more information contact us on 0330 124 4540 or email email@example.com
MRAM key features:
- Highest density – smallest footprint (more than 85 % space savings in the design)
- Non volatile and programmable
- Unlimited read/write endurance
- 20 years data retention
- Radiation tolerance
- TID: >50 krads (Si)
- SEL: >85 MeV.cm2/mg
- SEU: Immune
- Space quality and large flight heritage worldwide
- No pure tin content guarantee and minimum of 3% lead
- Very long lifetime electronics (technology proven for 15 to 18 years missions in space)
|Density||Configuration||Voltage||Clock Rate / Access Time||Package||Temp*||SCD|
|Density:1Mb||Configuration:128k x 8||Voltage:3.3V||Clock Rate / Access Time:40 ns||Package:SOP44||Temp*:C, I, M||SCD:3DPA-4730||:Request datasheet|
|Density:2Mb||Configuration:128k x 8||Voltage:3.3V||Clock Rate / Access Time:40 ns||Package:SOP54||Temp*:C, I, M||SCD:3DPA-4650||:Request datasheet|
|Density:4Mb||Configuration:512k x 8||Voltage:3.3V||Clock Rate / Access Time:40 ns||Package:SOP44||Temp*:C, I, M||SCD:3DPA-4520||:Request datasheet|
|Density:8Mb||Configuration:256k x 32||Voltage:3.3V||Clock Rate / Access Time:40 ns||Package:SOP68||Temp*:C, I, M||SCD:3DPA-4100||:Request datasheet|
|Density:64Mb||Configuration:8M x 8||Voltage:3.3V||Clock Rate / Access Time:40 ns||Package:SOP54||Temp*:C, I, M||SCD:3DPA-6170||:Request datasheet|