EEPROM - Radiation Tolerant Memory

EEPROM - Radiation Tolerant Memory

APC Technology Group plc

EEPROM – Radiation Tolerant Memory

3D PLUS’ Electrically Erasable and Programmable ROM (EEPROM) modules enable on-board and in-orbit programming capability as the high density non volatile memories. 1Mb to 8 Mb radiation tolerant EEPROM modules are available in a variety of temperature ranges, organised x8, x32, and x40, with a power supply of 3.3V or 5V.

Based on the very rugged MNOS memory cell technology, the radiation tolerant EEPROM stacks feature endurance of 10 000 write/erase cycles and 10-years data retention time.

The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments. 3D PLUS EEPROM products are used as processor’s boot and program ROM in a variety of high performance computer boards.

To discuss your exact requirements contact our technical team on 0330 1244540 or email hi-rel@apcplc.com

EEPROM key features:

  • High density – smallest footprint (more than 85 % space savings in the design)
  • Wide data bus up to x40
  • Non volatile and programmable
  • Parallel access interface
  • 10 000 write/erase cycles capability
  • 10 years data retention
  • Radiation tolerance
  • TID: 80 Krads (Si) (Read mode); 25 Krad(Si) (Write mode)
  • SEL: 80 Mev.cm2/mg
  • SEU: 80 MeV-cm2/mg (Standby mode),
    • 25 MeV-cm2/mg (Read mode), Saturated X-section: 1E-05 cm2/device (9.5E-12 cm2/bit)
    • 10 MeV-cm2/mg (Write mode), Saturated X-section: 5E-04 cm2/device (4.7E-10 cm2/bit)
  • Space quality and large flight heritage worldwide
  • No pure tin content guarantee and minimum of 3% lead
  • Very long lifetime electronics (technology proven for 15 to 18 years missions in space)
DensityConfigurationVoltageClock Rate / Access TimePackageTemp*SCD
Density:1MbConfiguration:128k x 8Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-1920:Request datasheet
Density:1MbConfiguration:128k x 8Voltage:5VClock Rate / Access Time:150 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-2740:Request datasheet
Density:2MbConfiguration:256k x 8Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-1570:Request datasheet
Density:2MbConfiguration:256k x 8Voltage:5VClock Rate / Access Time:150 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-2690:Request datasheet
Density:4MbConfiguration:512k x 8Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-1560:Request datasheet
Density:4MbConfiguration:512k x 8Voltage:5VClock Rate / Access Time:150 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-1780:Request datasheet
Density:4MbConfiguration:128k x 32Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP64Temp*:C, I, MSCD:3DPA-1580:Request datasheet
Density:4MbConfiguration:128k x 32Voltage:5VClock Rate / Access Time:150 nsPackage:SOP64Temp*:C, I, MSCD:3DPA-1970:Request datasheet
Density:5MbConfiguration:128k x 40Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP64Temp*:C, I, MSCD:3DPA-2480:Request datasheet
Density:5MbConfiguration:128k x 40Voltage:5VClock Rate / Access Time:150 nsPackage:SOP64Temp*:C, I, MSCD:3DPA-1550:Request datasheet
Density:8MbConfiguration:1M x 8Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-1630:Request datasheet
Density:8MbConfiguration:1M x 8Voltage:5VClock Rate / Access Time:150 nsPackage:SOP40Temp*:C, I, MSCD:3DPA-1850:Request datasheet
Density:8MbConfiguration:256k x 32Voltage:3.3VClock Rate / Access Time:250 nsPackage:SOP64Temp*:C, I, MSCD:3DPA-1820:Request datasheet
Density:8MbConfiguration:256k x 32Voltage:5VClock Rate / Access Time:150 nsPackage:SOP64Temp*:C, I, MSCD:3DPA-2900:Request datasheet
Temperature Range* C = commercial, I = industrial and M= military temp range

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