Diodes and capacitors

Diodes and capacitors

RF and Microwave Diodes and Capacitors

Available in the UK from APC RF & Microwave, API Technologies specialises in offering fully customised, high performance and high reliability silicon microwave diodes supplied by for space, satellite and mega constellation applications. API’s PIN, LIM, step recovery and tuning varactor microwave diodes provide broadband performance from 1 MHz to 20 GHz in ceramic packages ideal for switching, attenuator and control applications.

API’s years of robust heritage, coupled with skilled design and production, provides OEM companies with high quality, custom microwave semiconductor products as well as higher level assemblies. Manufactured in a Class H and K facility and tested to MIL-STD-883 and MIL-STD-202, API’s microwave diodes for space are amongst the most robust and reliable on the market.

For all your diode and capacitor requirements contact APC RF & Microwave on 0330 124 4540 or email rfmicrowave@apcplc.com

Frequency Multiplier Diodes

These diodes find application in high efficiency multiplier and up/down converter applications and for comb generators.

Features:

  • Breakdown voltage up to 75V
  • 50-1500 snap time
  • Thermal resistance: 12°C/W- 60°C/W

Tuning Varactor Diodes

Tuning varactor diodes are ideally suited for frequency tuning applications up to 20 GHz. These devices are designed for use in solid state electronic tuning of transistor, Gunn and IMPATT oscillators. They may also be used in tunable filters, phase shifters up and down converters and low order multipliers.

Features:

  • Breakdown voltage up to 60V
  • Storage/operating temperature range -65°C to +150°C
  • Up to 7.3 CTO/CT VB

PIN Diodes

Fast Switching PIN and NIP Diodes

The ML 4600 series of PIN and NIP diodes are designed for control applications such as RF switching limiting, duplexing, phase shifting, modulation and pulse forming.

Features:

  • Breakdown voltage up to 200V
  • Minority carrier lifetime from 150ns- 400ns
  • Switching time up to 40ns
High Power PIN Diodes

ML 4650 high breakdown PIN diodes exhibit low thermal resistance and are designed for use in high power switches, receiver protectors are phase shifters from 0.1 to 18 GHz.

Features:

  • Breakdown voltage up to 200V
  • Minority carrier lifetime from 150ns- 400ns
  • Switching time up to 40ns
Broadband PIN Diodes

These PIN devices are intended for microstrip or stripline control circuits as well as for direct replacements for existing non-hermetic epoxy encapsulated devices. They can function as power switches, limiters, phase-shifters, attenuators and duplexers.

Features:

  • Frequency range of 0.1GHz-12.0 GHz
  • Isolation: 25dB
  • Switching time up to 150ns
Silicon Dioxide Passivated Chip PIN Diodes

API’s series of passivated PIN diode chips have an optimally tailored profile and sputtered gold metallisation. Our total in-house capabilities allow or broad spectrum of epitaxial resistivity’s and thickness for specific design requirements.

Features:

  • Breakdown voltage up to 500V
  • Minority carrier lifetime from 10ns – 380ns
  • Reverse recovery time up to 40ns
High CW Power Plated Heatsink PIN an NIP Diodes

The reduced series resistance makes the low capacitance versions ideally suited to high frequency operations.

Features:

  • Minority carrier lifetime: 10ns-400ns
  • Switching time up to 40ns
  • Breakdown voltage up to 200V
Silicon Limiter PIN Diodes

The ML 4200 series is a range or oxide passivated silicon mesa diodes designed for limiter applications, especially those requiring low turn-on.

Features:

  • Breakdown voltage up to 50V
  • Forward resistance up to 1.5Ohms
  • Threshold up to 15dB

For product sales and technical advice on our range of RF and microwave electronic components contact our team on: